• DocumentCode
    980558
  • Title

    Single-mode InGaAsP/InP buried waveguide structures grown on channelled {111}B InP substrates

  • Author

    Benson, T.M. ; Syrbu, A.V. ; Chand, Naresh ; Houston, P.A.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    18
  • Issue
    19
  • fYear
    1982
  • Firstpage
    812
  • Lastpage
    813
  • Abstract
    InGaAsP buried waveguide structures were fabricated by LPE on channelled {111}B InP substrates. Control of the channel depth and growth time enabled waveguides of small dimensions to be produced which supported one TE and one TM polarised mode only.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; liquid phase epitaxial growth; optical waveguides; semiconductor growth; III-V semiconductors; LPE; TE mode; TM polarised mode; channelled {111}B InP substrates; single-mode InGaAsP-InP buried waveguide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820552
  • Filename
    4246860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980558