A complete substrate current model including band-to-band tunneling current for circuit simulation

Author

Tanizawa, Motoaki ; Ikeda, Mikio ; Kotani, Norihiko ; Tsukamoto, Katsuhiro ; Horie, Kazuo

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

12

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

1749

Lastpage

1757

Abstract

A simple and accurate substrate current model that is valid in the whole operation region of a MOSFET with various dimensions is presented. The theory is based on hot-carrier induced impact ionization and band-to-band tunneling (BTBT). All the parameters in the model can be assigned proper physical meanings and are easily extracted from the measurement data. The model is incorporated in a Mitsubishi Circuit Simulator (MICS). Both the accuracy and the efficiency of the model are shown by experiment and simulation, and hence make the simulator useful for designers who care about low power applications

Keywords

circuit analysis computing; digital simulation; impact ionisation; insulated gate field effect transistors; semiconductor device models; tunnelling; MICS; MOSFET; Mitsubishi Circuit Simulator; band-to-band tunneling current; circuit simulation; hot-carrier induced impact ionization; low power applications; substrate current model; Analytical models; Circuit simulation; Data mining; Hot carriers; Impact ionization; MOS devices; MOSFET circuits; Microwave integrated circuits; Tunneling; Ultra large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.248086

Filename

248086