• DocumentCode
    980662
  • Title

    Design rules to minimize the effect of joule heating in Greek cross test structures

  • Author

    Enderling, Stefan ; Dicks, Martin H. ; Smith, Stewart ; Stevenson, J. Tom M ; Walton, Anthony J.

  • Author_Institution
    Scottish Microelectron. Centre, Univ. of Edinburgh, UK
  • Volume
    17
  • Issue
    2
  • fYear
    2004
  • fDate
    5/1/2004 12:00:00 AM
  • Firstpage
    84
  • Lastpage
    90
  • Abstract
    This paper presents work on the analysis of the effect of Joule heating on sheet resistivity measurements using Greek cross test structures. As part of this work, design rules have been derived to minimize the heating effect associated with currents forced during their measurement. To accomplish this, finite-element (FE) simulations were employed to identify the location of heat generation and cooling mechanisms in the structures. This identified that the temperature could be minimized by: firstly, decreasing cross arm length, and therefore both electrical and thermal resistance of the arms; and secondly, by integrating pads and leads to improve the heat sink effect. These results were confirmed by sheet resistance measurements of four different Greek cross designs which demonstrated that the proposed design rules reduced the Joule heating effects on the sheet resistance measurements by up to 25%.
  • Keywords
    MIS structures; aluminium; cooling; electrical resistivity; finite element analysis; heat sinks; silicon compounds; thermal conductivity; Al-SiO2-Si; Greek cross test structures; cooling; electrical resistance; finite element simulations; heat generation; heat sink effect; joule heating effect; sheet resistivity; thermal resistance; Conductivity measurement; Cooling; Current measurement; Electrical resistance measurement; Finite element methods; Force measurement; Iron; Resistance heating; Testing; Thermal resistance; Critical dimension metrology; Greek cross; Joule heating; sheet resistance; simulation;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2004.826961
  • Filename
    1296711