• DocumentCode
    980688
  • Title

    Transferred-electron oscillations in In0.53Ga0.47As

  • Author

    Zhao, Y.Y. ; Wei, C.J. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    18
  • Issue
    19
  • fYear
    1982
  • Firstpage
    835
  • Lastpage
    836
  • Abstract
    Transferred-electron oscillations were observed and investigated in planar devices of In0.53Ga0.47As. The peak-to-peak magnitude of oscillations with respect to the device current at threshold field was as high as 70%, indicating the peak-to-valley velocity ratio of 3.3:1 for this material. The domain velocity was estimated from the oscillation frequency (2 GHz) and the corresponding device length (40 ¿m) to be 8×106 cms¿1. The results presented in the letter show a promising prospect for TED applications of this ternary alloy.
  • Keywords
    Gunn devices; III-V semiconductors; gallium arsenide; indium compounds; 2 GHz; III-V semiconductor; In0.53Ga0.47As; domain velocity; peak-to-valley velocity ratio; transferred electron oscillations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820567
  • Filename
    4246894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980688