• DocumentCode
    980751
  • Title

    Test structure design considerations for RF-CV measurements on leaky dielectrics

  • Author

    Schmitz, Jurriaan ; Cubaynes, Florence N. ; Havens, Ramon J. ; De Kort, Randy ; Scholten, Andries J. ; Tiemeijer, Luuk F.

  • Author_Institution
    Philips Res., Leuven, Belgium
  • Volume
    17
  • Issue
    2
  • fYear
    2004
  • fDate
    5/1/2004 12:00:00 AM
  • Firstpage
    150
  • Lastpage
    154
  • Abstract
    We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm2. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
  • Keywords
    CMOS integrated circuits; MOS capacitors; capacitance; current density; dielectric materials; leakage currents; MOS capacitance-voltage measurement; MOS parameter; RF test structures; accumulation; depletion; gate leakage current density; leaky dielectrics; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Design methodology; Dielectric measurements; Leakage current; Radio frequency; Robustness; Testing; $C$– $V$; CMOS; Capacitance–voltage; RF; characterization; direct tunneling; gate leakage;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2004.826998
  • Filename
    1296718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980751