Title :
Test structure design considerations for RF-CV measurements on leaky dielectrics
Author :
Schmitz, Jurriaan ; Cubaynes, Florence N. ; Havens, Ramon J. ; De Kort, Randy ; Scholten, Andries J. ; Tiemeijer, Luuk F.
Author_Institution :
Philips Res., Leuven, Belgium
fDate :
5/1/2004 12:00:00 AM
Abstract :
We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm2. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
Keywords :
CMOS integrated circuits; MOS capacitors; capacitance; current density; dielectric materials; leakage currents; MOS capacitance-voltage measurement; MOS parameter; RF test structures; accumulation; depletion; gate leakage current density; leaky dielectrics; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Design methodology; Dielectric measurements; Leakage current; Radio frequency; Robustness; Testing; $C$– $V$; CMOS; Capacitance–voltage; RF; characterization; direct tunneling; gate leakage;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2004.826998
