• DocumentCode
    980776
  • Title

    Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers

  • Author

    Tsang, W.T. ; Logan, R.A. ; Ditzenberger, J.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    18
  • Issue
    19
  • fYear
    1982
  • Firstpage
    845
  • Lastpage
    847
  • Abstract
    Ultra-low-threshold semiconductor diode lasers were fabricated by forming buried heterostructures from MBE-grown graded-index waveguide, separate-confinement heterostructure (GRIN-SCH) wafers. CW threshold currents as low as 2.5 mA for 250 ¿m cavity length, output power as high as 20 mW/mirror and external quantum efficiency as high as 80% were obtained.
  • Keywords
    molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; MBE-grown graded-index waveguide; quantum efficiency; separate confinement; ultra-low-threshold semiconductor BH diode lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820575
  • Filename
    4246909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980776