Title :
Room-temperature CW operation of 1.3 ¿m distributed-feedback GaInAsP/InP lasers
Author :
Uematsu, Y. ; Okuda, H. ; Kinoshita, J.
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
Distributed-feedback GaInAsP/InP lasers with a low threshold current emitting at 1.3 ¿m have been successfully fabricated. A minimum CW threshold current of 66 mA was obtained at room temperature. The temperature coefficient of lasing wavelength was 1 Å/°C, which is about a fifth of that for Fabry-Perot lasers. A stable single longitudinal mode was obtained up to 52°C in a p-side-up configuration.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron laser; 52 degree C operation; DFB lasers; distributed-feedback GaInAsP/InP lasers; low threshold current; optical communications laser sources; p-side-up configuration; room temperature CW operation; semiconductor lasers; stable single longitudinal mode; temperature coefficient of lasing wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820581
