• DocumentCode
    980957
  • Title

    GaSb-based monolithic EP-VCSEL emitting above 2.5 μm

  • Author

    Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, Frederic

  • Author_Institution
    Inst. Electron. du Sud, Univ. Montpellier, Montpellier
  • Volume
    44
  • Issue
    23
  • fYear
    2008
  • Firstpage
    1357
  • Lastpage
    1359
  • Abstract
    The first electrically-pumped GaSb-based vertical cavity surface emitting lasers emitting above 2.5 mum at room temperature are reported. This monolithic all-epitaxial structure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. Devices with a diameter of 30 mum operate in quasi-CW (1 mus, 5) at 2.52 mum above 300 K. A minimum threshold current of 4.7 kA/cm2 in pulsed operation (100 ns, 0.5) was obtained at 251 K with these devices.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; DBR laser; GaInAsSb-AlGaAsSb; electrically-pumped laser; monolithic EP-VCSEL; monolithic all-epitaxial structure; multiquantum-well active region; size 30 mum; temperature 251 K; time 100 ns; vertical cavity surface emitting lasers; wavelength 2.52 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082845
  • Filename
    4668400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980957