Title :
Growth and optical properties of single-crystal metastable (GaAs)1¿xGex alloys
Author :
Barnett, S.A. ; Ray, M.A. ; Lastras, A. ; Kramer, B. ; Greene, J.E. ; Raccah, P.M. ; Abels, L.L.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, USA
Abstract :
Single-crystal metastable (GaAs)1¿xGex alloys with 0¿x¿1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0 exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0¿0.5 eV near 35 mole % Ge. Raman results exhibited a nonlinear `single-mode¿ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.
Keywords :
Raman spectra of inorganic solids; gallium arsenide; germanium compounds; light absorption; semiconductor growth; semiconductor materials; semiconductor thin films; sputtering; (100) GaAs substrates; Raman results; direct gap; optical absorption measurements; optical modes; optical properties; semiconductor growth; single-crystal metastable (GaAs)1-xGex alloys; ultra-high-vacuum ion-beam sputter deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820604
