Title :
Measurement of beam parameters of index-guided and gain-guided single-frequency InGaAsP injection lasers
Author :
Lee, T.P. ; Burrus, C.A. ; Marcuse, D. ; Dentai, A.G. ; Nelson, R.J.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
A value of 1.8 for the astigmatism factor K in narrow stripe InGaAsP/InP lasers is obtained by direct measurement of the beam parameters. Previously, values from 10 to 30 were found for AlGaAs/GaAs lasers of similar geometry.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; semiconductor junction lasers; astigmatism factor; beam parameters measurement; gain guided injection laser; index guided injection laser; narrow stripe InGaAsP/InP lasers; semiconductor laser; single frequency injection laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820615
