Title :
New explanation of ND¿1 dependence of specific contact resistance for n-GaAs
Author :
Dingfen, Wu ; Heime, K.
Author_Institution :
University of Duisburg, Solid-State Electronics Department, Duisburg, West Germany
Abstract :
A new model of the ohmic contact to n-GaAs is proposed. It assumes that the contact resistance is due to the n+/n-barrier between the contact region (n+) and the semiconductor bulk (n = ND) as long as the bulk concentration is smaller than the effective density of states. Then the contact resistance is inversely proportional to the dopant concentration.
Keywords :
III-V semiconductors; contact resistance; electronic density of states; gallium arsenide; ohmic contacts; ND-1 dependence; bulk concentration; carrier concentration; dopant concentration; effective density of states; model; n+/n-barrier; n-GaAs; ohmic contact; semiconductor; specific contact resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820645
