DocumentCode :
981549
Title :
Thin-Film Cryotrons: Part II-Cryotron Characteristics and Circuit Applications
Author :
Slade, A.E.
Volume :
48
Issue :
9
fYear :
1960
Firstpage :
1569
Lastpage :
1576
Abstract :
Part II describes the characteristics of the thin-film cryotron. The superconducting to normal transition in a tin gate 0.125 inch wide and 3 × 10-5 cm thick is controlled by current in a single lead control, 0.006 inch wide, which crosses the gate. Silicon monoxide is used for insulation. The switching time of a cryotron circuit is dependent upon the inductance and resistance of the circuit. Therefore, it is important to reduce the inductance by using a superconductive ground plane and by reducing the length of all interconnecting leads. Nonlocking flip-flops have been constructed, and a ring of five flip-flops have operated with a delay per stage of ¿ ¿sec.
Keywords :
Flip-flops; Inductance; Insulation; Silicon; Superconducting thin films; Superconductivity; Switching circuits; Thickness control; Thin film circuits; Tin;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1960.287670
Filename :
4066216
Link To Document :
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