Title :
High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers
Author :
Choi, H.K. ; Turner, G.W. ; Manfra, Michael J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA
fDate :
7/4/1996 12:00:00 AM
Abstract :
Strained quantum well diode lasers consisting of compressively strained InAsSb active layers and tensile strained InAlAsSb barrier layers have exhibited CW power of 215 mW/facet at 80 K. The internal quantum efficiency and internal loss coefficient at 80 K are estimated to be 63% and 9 cm-1, respectively
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; optical losses; quantum well lasers; 3.4 micrometre; 63 percent; 80 K; CW power; InAsSb-InAlAsSb; compressively strained active layers; diode lasers; internal loss coefficient; internal quantum efficiency; strained quantum well diode lasers; tensile strained barrier layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960873
