DocumentCode
982083
Title
Optoelectronic integrated circuits
Author
Forrest, Stephen R.
Author_Institution
University of South California, Los Angeles, CA, USA
Volume
75
Issue
11
fYear
1987
Firstpage
1488
Lastpage
1497
Abstract
Monolithic integration of photonic devices such as lasers, modulators, and photodetectors, along with their associated electronic circuitry, has recently made significant advances such that high performance is now being achieved in devices using both the GaAs and InP materials systems. The advances in these optoelectronic integrated circuits, or OEICs, are being driven by the needs of second-generation photonic systems including optical interconnects, optical computing and signal processing, and communications. Furthermore, the pace of the technology is being set by the improvements made in semiconductor materials growth using such methods as molecular beam and vapor phase epitaxies. In this paper we discuss the needs of several generic photonic systems for advanced optoelectronic chips. These needs are now being met by the fabrication of high-performance and highly functional integrated transmitters, receivers, modulators, and arrays of such devices. We discuss examples of these and other archetype integrated circuits which serve to illustrate the advances in, and challenges to this new device technology. Finally, a brief description is given of the materials growth techniques which are used in OEIC structures.
Keywords
Gallium arsenide; Indium phosphide; Integrated circuit technology; Monolithic integrated circuits; Optical interconnections; Optical materials; Optical modulation; Photodetectors; Photonic integrated circuits; Semiconductor materials;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1987.13910
Filename
1458177
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