• DocumentCode
    982083
  • Title

    Optoelectronic integrated circuits

  • Author

    Forrest, Stephen R.

  • Author_Institution
    University of South California, Los Angeles, CA, USA
  • Volume
    75
  • Issue
    11
  • fYear
    1987
  • Firstpage
    1488
  • Lastpage
    1497
  • Abstract
    Monolithic integration of photonic devices such as lasers, modulators, and photodetectors, along with their associated electronic circuitry, has recently made significant advances such that high performance is now being achieved in devices using both the GaAs and InP materials systems. The advances in these optoelectronic integrated circuits, or OEICs, are being driven by the needs of second-generation photonic systems including optical interconnects, optical computing and signal processing, and communications. Furthermore, the pace of the technology is being set by the improvements made in semiconductor materials growth using such methods as molecular beam and vapor phase epitaxies. In this paper we discuss the needs of several generic photonic systems for advanced optoelectronic chips. These needs are now being met by the fabrication of high-performance and highly functional integrated transmitters, receivers, modulators, and arrays of such devices. We discuss examples of these and other archetype integrated circuits which serve to illustrate the advances in, and challenges to this new device technology. Finally, a brief description is given of the materials growth techniques which are used in OEIC structures.
  • Keywords
    Gallium arsenide; Indium phosphide; Integrated circuit technology; Monolithic integrated circuits; Optical interconnections; Optical materials; Optical modulation; Photodetectors; Photonic integrated circuits; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1987.13910
  • Filename
    1458177