• DocumentCode
    982256
  • Title

    Optical gain measurements of 1.3 ¿m In1¿xGaxAsyP1¿yAs function of injected current density

  • Author

    Prince, F.C. ; Mattos, T.J.S. ; Patel, N.B.

  • Author_Institution
    Centro de Pesquisa e Desenvolvimento da Telebrás¿DCM, Campinas, Brazil
  • Volume
    18
  • Issue
    24
  • fYear
    1982
  • Firstpage
    1054
  • Lastpage
    1055
  • Abstract
    We have measured the gain coefficient of 1.3 ¿m InGaAsP as a function of injected current density by measuring the spectra of amplified spontaneous emission as a function of excited length, using a laser device in which the p contact was divided into eight segments that can be pumped independently. We found a linear behaviour of the gain peak against injected current density up to gain values of 180 cm¿1.
  • Keywords
    III-V semiconductors; gain measurement; gallium arsenide; indium compounds; optical variables measurement; semiconductor junction lasers; 1.3 micron; III-V semiconductor; In1-xGaxAsyP1-y DH lasers; amplified spontaneous emission; injected current density; laser pumping; optical gain measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820720
  • Filename
    4247079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982256