DocumentCode
982435
Title
1/f noise behavior in semiconductor laser degradation
Author
Fukuda, Mitsuo ; Hirono, Takuo ; Kurosaki, Takeshi ; Kano, Fumiyoshi
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
5
Issue
10
fYear
1993
Firstpage
1165
Lastpage
1167
Abstract
It is experimentally demonstrated that the increase in residual spectral linewidth during device degradation is due to an increase in 1/f noise in a multiple quantum-well (MQW) distributed-feedback (DFB) laser. The origin of 1/f noise and its influence on device characteristics is discussed and clarified by observing the degradation behavior of the spectral linewidth.<>
Keywords
distributed feedback lasers; random noise; semiconductor device noise; semiconductor lasers; spectral line breadth; 1/f noise behavior; MQW distributed-feedback DFB laser; device characteristics; device degradation; distributed-feedback; multiple quantum-well; residual spectral linewidth; semiconductor laser degradation; spectral linewidth; Degradation; Epitaxial growth; Laser modes; Laser noise; Monitoring; Optical noise; Quantum well devices; Radiative recombination; Semiconductor device noise; Semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.248415
Filename
248415
Link To Document