5.25-W CW near-diffraction-limited tapered-stripe semiconductor optical amplifier

Author

Mehuys, D. ; Goldberg, L. ; Welch, D.F.

Author_Institution

SDL Inc., San Jose, CA, USA

Volume

5

Issue

10

fYear

1993

Firstpage

1179

Lastpage

1182

Abstract

A broad-area tapered-contact single-pass amplifier emitting at 860-nm wavelength is demonstrated to emit up to 5.25 W continuous wave (CW) in a near-diffraction-limited radiation pattern. The diffraction-limited component of the radiation pattern, comprising greater than 87% of the total power at 5.25-W CW output, is observed to decrease slightly with increasing drive current due to filament formation. The output beam astigmatism is found to saturate at high power output in accordance with gain saturation, which indicates that the high-quality output beam remains stable with respect to small changes in current or injected power.<>

Keywords

light diffraction; optical saturation; semiconductor lasers; 5.25 W; 860 nm; CW near-diffraction-limited tapered-stripe semiconductor optical amplifier; broad-area; continuous wave; drive current; filament formation; gain saturation,; high power output; high-quality output beam; injected power; near-diffraction-limited radiation pattern; output beam astigmatism; single-pass; tapered-contact; total power; Laser beams; Optical amplifiers; Optical saturation; Power amplifiers; Power generation; Pulse amplifiers; Pump lasers; Semiconductor optical amplifiers; Stimulated emission; Vision defects;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.248420

Filename

248420