Title :
T-emitter bipolar power transistor with negative-temperature-gradient current gain
Author_Institution :
Ei, OOUR Fabrika Poluprovodnika, Ni¿, Yugoslavia
Abstract :
A PNP epitaxial-base power transistor with double diffused emitter (T-emitter) which exhibits a negative temperature gradient for ß is described. Qualitative analysis shows that a fall-off in ß with increase in temperature is a consequence of both the T-emitter geometry and the boron double diffused emitter area. Measurements on realised transistors give a mean value of dß/dt of ¿0.25 at temperatures ranging from 20°C to 110°C.
Keywords :
bipolar transistors; power transistors; PNP epitaxial base; T-emitter bipolar power transistor; double diffused emitter; negative-temperature-gradient current gain; qualitative analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820742
