A simple method to determine carrier recombinations in a semiconductor laser optical amplifier

Author

Chu, C.Y.J. ; Ghafouri-Shiraz, H.

Author_Institution

Fina Tech Ltd., Hong Kong

Volume

5

Issue

10

fYear

1993

Firstpage

1182

Lastpage

1185

Abstract

The contribution of nonradiative carrier recombinations to the characteristics of long-wavelength InGaAsP/InP semiconductor laser devices is verified by measuring the amplified spontaneous emission (ASE) power from a 1.5- mu m semiconductor laser amplifier (SLA) against the bias current. This method provides a simple and straightforward way to determine the mathematical form of recombination rate in a long-wavelength semiconductor laser, provided that the structural parameters of the laser are known.<>

Keywords

III-V semiconductors; carrier mobility; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser theory; semiconductor lasers; superradiance; 1.5 mum; ASE power; InGaAsP-InP; InGaAsP/InP; amplified spontaneous emission; bias current; carrier recombinations; long-wavelength; nonradiative carrier recombinations; semiconductor laser optical amplifier; structural parameters; Current measurement; Indium phosphide; Power amplifiers; Power lasers; Power measurement; Radiative recombination; Semiconductor lasers; Semiconductor optical amplifiers; Spontaneous emission; Structural engineering;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.248421

Filename

248421