DocumentCode
982507
Title
Formation of shallow photodiodes by implantation of boron into mercury cadmium telluride
Author
Pitcher, P.G. ; Hemment, P.L.F. ; Davis, Q.V.
Author_Institution
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Volume
18
Issue
25
fYear
1982
Firstpage
1090
Lastpage
1092
Abstract
Hall-effect measurements on p-type MCT implanted with 1 × 1014 B+/cm2 at 150 keV show that an abrupt junction is formed at a depth of 0.6 ± 0.12 ¿m after annealing at 230° for 7 min with a ZnS cap. Prior to the anneal the carrier profile was graded and extended to a depth of 5.0 ± 1.0 ¿m. Photodiodes have been formed by a dual implant of 5 × 1014 B+/cm2 at 100 keV and 50 keV, and after annealing a five-fold improvement in Ro A has been measured to give a value of 1.2 ¿cm2.
Keywords
Hall effect; II-VI semiconductors; boron; cadmium compounds; ion implantation; mercury compounds; photodiodes; B implantation; Hall effect measurements; Hg0.787Cd0.213Te; II-VI semiconductor; ZnS cap; abrupt junction; annealing; carrier profile; shallow photodiodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820745
Filename
4247111
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