• DocumentCode
    982685
  • Title

    Anodic oxidation of a-Si:H films

  • Author

    Yamamoto, Hiroshi ; Arimoto, S. ; Hasegawa, Hiroshi ; Ohno, Hideo ; Nanjo, J.

  • Author_Institution
    Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
  • Volume
    19
  • Issue
    1
  • fYear
    1983
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    It is shown that thick native oxide layers (up to 2500 Ã…) can be grown on a-Si:H films at room temperature by anodic oxidation. Ellipsometric measurements indicate uniformity of the oxide layer with a refractive index of 1.46. The voltage growth rate is found to be 5.3 Ã…/V.
  • Keywords
    amorphous semiconductors; elemental semiconductors; ellipsometry; hydrogen; oxidation; semiconductor thin films; silicon; amorphous Si:H films; anodic oxidation; ellipsometry; refractive index; room temperature; thick native oxide layers; voltage growth rate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830005
  • Filename
    4247136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982685