DocumentCode :
982730
Title :
PMOS transistors fabricated in large-area laser-crystallised Si on silica
Author :
Herbst, D. ; B¿¿sch, M.A. ; Lemons, R.A. ; Tewksbury, S.K. ; Harrison, T.R.
Author_Institution :
Bell Laboratories, Holmdel, USA
Volume :
19
Issue :
1
fYear :
1983
Firstpage :
12
Lastpage :
14
Abstract :
PMOS transistors have been fabricated in device-worthy Si which was achieved by large-area laser-crystallisation of Si on silica. The crystallised Si contains few large-angle grain boundaries due to laser-beam inhomogeneity but exhibits subgrain boundaries aligned along the laser track. Cracking of the Si, a result of the mismatch of the thermal expansion coefficients of Si and silica, has been substantially reduced by removing only a stripped region of the SiO2 encapsulation layer for transistor fabrication. A high yield and good electrical characteristics of the devices were obtained.
Keywords :
crystallisation; elemental semiconductors; insulated gate field effect transistors; laser beam applications; PMOS transistors; SiO2 encapsulation layer; electrical characteristics; large-angle grain boundaries; large-area laser-crystallised Si; subgrain boundaries; thermal expansion coefficients; yield;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830009
Filename :
4247142
Link To Document :
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