DocumentCode :
982747
Title :
Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si:H p-i-n photodiode
Author :
Wagner, Christoph ; Frankenberger, J. ; Deimel, Peter P.
Author_Institution :
DASA, Munchen, Germany
Volume :
5
Issue :
10
fYear :
1993
Firstpage :
1257
Lastpage :
1259
Abstract :
We have fabricated an optical pressure sensor consisting of a Mach-Zehnder (MZ) interferometer and a thin membrane anisotropically etched into the silicon substrate underneath the measuring arm of the interferometer. The oxynitride rib-waveguides are single mode both for the TE and the TM polarization. To measure the constructive and destructive interferences at the output section of the interferometer we have integrated the rib waveguide with a lateral a-Si:H p-i-n photodiode. The number of constructive interferences measured for a given membrane deflection differs depending on TE or TM polarization.<>
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; integrated optics; integrated optoelectronics; light interferometers; optical sensors; p-i-n photodiodes; photodetectors; pressure sensors; silicon; Mach-Zehnder interferometer; Si; Si:H; TE polarization; TM polarization; anisotropic etching; lateral a-Si:H p-i-n photodiode; membrane deflection; optical pressure sensor; oxynitride rib-waveguides; rib waveguide integration; silicon substrate; single mode; thin membrane; Anisotropic magnetoresistance; Biomembranes; Etching; Geometrical optics; Interference; Optical interferometry; Optical sensors; Pressure measurement; Silicon; Tellurium;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.248446
Filename :
248446
Link To Document :
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