DocumentCode
982913
Title
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
Author
Kumar, M.J. ; Reed, Mark A. ; Amaratunga, Gehan ; Cohen, Guy M. ; Janes, David B. ; Lieber, C.M. ; Meyyappan, M. ; Wernersson, Lars-Erik ; Wang, K.L. ; Chau, R.S. ; Kamins, Theodore I. ; Lundstrom, Mark ; Bin Yu ; Chongwu Zhou
Volume
55
Issue
11
fYear
2008
Firstpage
2813
Lastpage
2819
Abstract
The primary goal of this special issue is, therefore, to compile advances in different aspects of nanowire-based devices including device physics and modeling, device design, characterization techniques, technology, and applications so that this special issue will not only be of great archival value but also attract new researchers into this area for further accelerating the application of nanowires in building cheaper and higher performance electronic systems.
Keywords
MOSFET; nanoelectronics; nanowires; semiconductor device models; semiconductor materials; semiconductor technology; MOSFET downscaling; device characterization techniques; nanowire transistor technology; nanowire transistors modeling; semiconductor nanowire devices; transistors device design;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.2006781
Filename
4668582
Link To Document