• DocumentCode
    982999
  • Title

    1/f noise in short n-p+ diffusion-current-dominated (HgCd)Te avalanche photodiodes

  • Author

    Vandamme, Lode K J ; Orsal, B.

  • Author_Institution
    Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
  • Volume
    35
  • Issue
    4
  • fYear
    1988
  • fDate
    4/1/1988 12:00:00 AM
  • Firstpage
    502
  • Lastpage
    506
  • Abstract
    The observed 1/f noise from Hg0.56Cd0.44 Te avalanche n+-n--p+ photodiodes in the forward and reverse current shows the following regions: (i) ohmic, (ii) diffusion-dominated short diode, (iii) series-resistance dominated, (iv) diffusion-dominated short diode with reverse-bias-dependent length, and (v) multiplication. The interpretation is based on Hooge´s empirical 1/f noise formula and Kleinpenning´s model for 1/f noise in short diodes
  • Keywords
    II-VI semiconductors; avalanche photodiodes; cadmium compounds; electron device noise; mercury compounds; 1/f noise; Hg0.56Cd0.44Te; Hooge´s empirical 1/f noise formula; Kleinpenning´s model; avalanche photodiodes; diffusion dominated short diode region; forward current; interpretation; multiplication region; n+-n--p+ photodiodes; ohmic region; reverse bias dependent length region; reverse current; semiconductors; series resistance dominated region; short diodes; Avalanche breakdown; Avalanche photodiodes; Charge carrier lifetime; Diodes; Equations; Helium; Lighting; Noise generators; Temperature dependence; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2485
  • Filename
    2485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982999