Title :
1/f noise in short n-p+ diffusion-current-dominated (HgCd)Te avalanche photodiodes
Author :
Vandamme, Lode K J ; Orsal, B.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fDate :
4/1/1988 12:00:00 AM
Abstract :
The observed 1/f noise from Hg0.56Cd0.44 Te avalanche n+-n--p+ photodiodes in the forward and reverse current shows the following regions: (i) ohmic, (ii) diffusion-dominated short diode, (iii) series-resistance dominated, (iv) diffusion-dominated short diode with reverse-bias-dependent length, and (v) multiplication. The interpretation is based on Hooge´s empirical 1/f noise formula and Kleinpenning´s model for 1/f noise in short diodes
Keywords :
II-VI semiconductors; avalanche photodiodes; cadmium compounds; electron device noise; mercury compounds; 1/f noise; Hg0.56Cd0.44Te; Hooge´s empirical 1/f noise formula; Kleinpenning´s model; avalanche photodiodes; diffusion dominated short diode region; forward current; interpretation; multiplication region; n+-n--p+ photodiodes; ohmic region; reverse bias dependent length region; reverse current; semiconductors; series resistance dominated region; short diodes; Avalanche breakdown; Avalanche photodiodes; Charge carrier lifetime; Diodes; Equations; Helium; Lighting; Noise generators; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
