• DocumentCode
    983191
  • Title

    One watt CW visible single-quantum-well lasers

  • Author

    Lindstr¿¿m, C. ; Burnham, R.D. ; Scifres, D.R. ; Paoli, T.L. ; Streifer, W.

  • Author_Institution
    Xerox Palo Alto Research Centers, Palo Alto, USA
  • Volume
    19
  • Issue
    3
  • fYear
    1983
  • Firstpage
    80
  • Lastpage
    81
  • Abstract
    We report room-temperature CW high output power (1 W) at ~ 7770 Å from OM-VPE-grown ultra-thin single-quantum (~60 Å)-well lasers. The devices are broad-area (250 × 210 ¿m) lasers with a quantum-well GaAlAs active region doped with Mg, and with applied high reflective and low reflective mirror facets. For an output power of 1 W from the emitting facet, the DC-to-light conversion efficiency is as high as 21%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; magnesium; semiconductor junction lasers; vapour phase epitaxial growth; 1 W; CW visible single-quantum-well lasers; GaAlAs; III-V semiconductor; Mg; OM-VPE growth; mirror facets;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830057
  • Filename
    4247235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=983191