Title :
Short-cavity single-frequency InGaAsP buried-heterostructure lasers
Author :
Lee, T.P. ; Burrus, C.A. ; Linke ; Nelson, R.J.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Short-cavity (50¿100 ¿m) index-guided lasers made by recleaving conventional 1.3 ¿m BH devices have been found to provide improved single-frequency output under both CW and modulated conditions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 50 to 100 micron; III-V semiconductors; index-guided lasers; short cavity lasers; single-frequency InGaAsP buried-heterostructure lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830059
