Title :
Effects of 140 Mbit/s operation on degradation of GaAlAs DH lasers
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Results are reported of a lifetest to compare the degradation of long-lived 20 ¿m stripe oxide isolated GaAlAs lasers operated CW and under simulated 140 Mbit/s optical-fibre-system conditions. Following operation at 55°C and 5 mW output for 12000 h it is reasonable to suggest that degradation is not enhanced by operation under 140 Mbit/s system conditions.
Keywords :
aluminium compounds; gallium arsenide; life testing; optical communication equipment; semiconductor junction lasers; 140 Mbit/s operation; GaAlAs DH lasers; III-V semiconductor; degradation; lifetest; optical-fibre-system;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830063
