DocumentCode
983241
Title
Effects of 140 Mbit/s operation on degradation of GaAlAs DH lasers
Author
Robertson, M.J.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
19
Issue
3
fYear
1983
Firstpage
88
Lastpage
89
Abstract
Results are reported of a lifetest to compare the degradation of long-lived 20 ¿m stripe oxide isolated GaAlAs lasers operated CW and under simulated 140 Mbit/s optical-fibre-system conditions. Following operation at 55°C and 5 mW output for 12000 h it is reasonable to suggest that degradation is not enhanced by operation under 140 Mbit/s system conditions.
Keywords
aluminium compounds; gallium arsenide; life testing; optical communication equipment; semiconductor junction lasers; 140 Mbit/s operation; GaAlAs DH lasers; III-V semiconductor; degradation; lifetest; optical-fibre-system;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830063
Filename
4247248
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