• DocumentCode
    983396
  • Title

    AlN capped annealing of Se and Sn implanted semi-insulating GaAs

  • Author

    Bensalem, R. ; Barrett, N.J. ; Sealy, B.J.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    19
  • Issue
    3
  • fYear
    1983
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    High-dose room-temperature implants of Se and Sn in undoped semi-insulating GaAs have been pulse-annealed at 1000°C using AlN as an encapsulant. Good electrical results and an improved surface quality were achieved compared with the use of CVD Si3N4 layers.
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; ion implantation; selenium; tin; AlN; CVD Si3N4 layers; GaAs:Se,Sn; III-V semiconductor; encapsulant; ion implantation; semiinsulating; surface quality;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830080
  • Filename
    4247287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=983396