DocumentCode
983452
Title
Transistor Internal Parameters for Small-Signal Representation
Author
Pritchard, R.L. ; Angell, J.B. ; Adler, R.B. ; Early, J.M. ; Webster, W.M.
Author_Institution
Texas Instruments Inc., Dallas, Tex.
Volume
49
Issue
4
fYear
1961
fDate
4/1/1961 12:00:00 AM
Firstpage
725
Lastpage
738
Abstract
The joint IRE-AIEE Task Group 28.4.7, on Transistor Internal Parameters, was organized with the following objectives: 1) To formulate a small-signal equivalent-circuit representation of a transistor, the parameters of which emphasize separately the principal physical mechanisms of the device. 2) To recommend symbols for these parameters consistent with accepted usage and other standards. 3) To exhibit the relationship between the equivalent-circuit representation described in item 1 above and those simplified representations commonly employed in circuit analysis or design. 4) To propose and discuss methods of determining these parameters from electrical measurements at the terminals. This report summarizes the work of the group on the first three of these objectives.
Keywords
Circuit analysis; Conductivity; Electric variables measurement; Frequency; Impedance; Instruments; Measurement standards; Senior members; Telephony; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1961.287843
Filename
4066399
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