• DocumentCode
    983452
  • Title

    Transistor Internal Parameters for Small-Signal Representation

  • Author

    Pritchard, R.L. ; Angell, J.B. ; Adler, R.B. ; Early, J.M. ; Webster, W.M.

  • Author_Institution
    Texas Instruments Inc., Dallas, Tex.
  • Volume
    49
  • Issue
    4
  • fYear
    1961
  • fDate
    4/1/1961 12:00:00 AM
  • Firstpage
    725
  • Lastpage
    738
  • Abstract
    The joint IRE-AIEE Task Group 28.4.7, on Transistor Internal Parameters, was organized with the following objectives: 1) To formulate a small-signal equivalent-circuit representation of a transistor, the parameters of which emphasize separately the principal physical mechanisms of the device. 2) To recommend symbols for these parameters consistent with accepted usage and other standards. 3) To exhibit the relationship between the equivalent-circuit representation described in item 1 above and those simplified representations commonly employed in circuit analysis or design. 4) To propose and discuss methods of determining these parameters from electrical measurements at the terminals. This report summarizes the work of the group on the first three of these objectives.
  • Keywords
    Circuit analysis; Conductivity; Electric variables measurement; Frequency; Impedance; Instruments; Measurement standards; Senior members; Telephony; Temperature;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1961.287843
  • Filename
    4066399