Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

Author

Su, S.L. ; Lyons, W.G. ; Tejayadi, O. ; Fischer, R. ; Kopp, W. ; Morko¿¿, H. ; McLevige, W. ; Yuan, H.T.

Author_Institution

University of Illinois, Department of Electrical Engineering & Coordinated Science Laboratory, Urbana, USA

Volume

19

Issue

4

fYear

1983

Firstpage

128

Lastpage

129

Abstract

Double heterojunction Al0.35Ga0.65As/GaAs bipolar junction transistors (DHBJTs) grown by molecular beam epitaxy (MBE) were fabricated and tested. Devices with 2000 Ã… and 500 Ã… base widths exhibited common emitter current gains of about 325 and 500, respectively, in a wide range of base and collector currents. The use of such high Al mole fraction and double heterojunctions placed stringent requirements on the growth parameter which had to be optimised and controlled very precisely to obtain such high current gains. These current gains compare with the previous best value of 120 obtained in a molecular beam epitaxial single heterojunction bipolar transistor having a 500 Ã…-thick base region.

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; 2000 Angstrom; 500 Angstrom; Al mole fraction; Al0.35Ga0.65As/GaAs; DHBJT; III-V semiconductors; MBE; base widths; common emitter current gains; double heterojunction bipolar transistors; growth parameter; molecular beam epitaxy;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19830090

Filename

4247304