GaAs-based heterojunction bipolar transistors for very high performance electronic circuits

Author

Asbeck, Peter M. ; Chang, Frank Mau-Chung ; Wang, Keh-Chung ; Sullivan, Gerard J. ; Cheung, Derek T.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

81

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1709

Lastpage

1726

Abstract

This paper reviews the principles and status of AlGaAs/GaAs heterojunction bipolar transistor technology. Comparisons of this technology with Si bipolar transistor and GaAs field-effect transistor technologies are made. Epitaxial materials, fabrication processes, transistor DC and RF characteristics, and modeling of AlGaAs/GaAs HBT´s are described. Key areas of HBT application are also highlighted

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor technology; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; DC characteristics; HBT application; RF characteristics; epitaxial materials; fabrication processes; heterojunction bipolar transistors; modeling; very high performance electronic circuits; Bipolar transistors; Breakdown voltage; Electronic circuits; FETs; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Modems; Semiconductor materials; Threshold voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.248960

Filename

248960