GaAs HBT´s for microwave integrated circuits

Author

Bayraktaroglu, Burhan

Author_Institution

Coll. of Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

81

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1762

Lastpage

1785

Abstract

The status of the microwave GaAs heterojunction bipolar transistor (HBT) technology is reviewed. Microwave circuits for advanced military and commercial systems continue to increase their dependence on the performance, functionality, and cost of active components fabricated using solid-state technology. The performance advantages provided by GaAs HBT´s, for several critical circuit applications, have stimulated a worldwide development activity. Progress in HBT device technology and microwave circuit applications has been extremely rapid because of the broad availability of III-V compound semiconductor epitaxial materials and prior experience with GaAs field-effect transistors (FET´s) and monolithic microwave integrated circuits (MMIC´s). The great flexibility of HBT´s in microwave circuits makes them prime candidates for applications in complex multifunctional microwave/digital IC´s in next-generation systems

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; reviews; GaAs; GaAs HBT; HBT device technology; III-V compound semiconductor; MMIC; epitaxial materials; heterojunction bipolar transistor; monolithic microwave integrated circuits; Application specific integrated circuits; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit technology; Microwave circuits; Microwave devices; Microwave integrated circuits; Microwave technology;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.248963

Filename

248963