Dependence of electron mobility on spacer thickness and electron density in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions

Author

Hsieh, K.H. ; Ohno, Hideo ; Wicks, G. ; Eastman, L.F.

Author_Institution

Cornell University, School of Electrical Engineering, Ithaca, USA

Volume

19

Issue

5

fYear

1983

Firstpage

160

Lastpage

162

Abstract

Modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions were grown by molecular beam epitaxy. Electron mobilities were measured at room temperature and 77 K as a function of undoped Al0.48In0.52As spacer layer thickness and sheet carrier concentration. Enhanced mobilities were as high as 10 900 cm2VÂ¿1sÂ¿1 at room temperature and 55 500 cm2VÂ¿1sÂ¿1 at 77 K in these samples with sheet carrier concentrations at 1 33 Ã— 1012 cmÂ¿2 (room temperature) and 1.26 Ã— 1012 cmÂ¿12 (77 K).

Keywords

III-V semiconductors; aluminium compounds; carrier density; carrier mobility; gallium arsenide; indium compounds; molecular beam epitaxial growth; p-n heterojunctions; semiconductor technology; 77K; GaInAs/AlInAs heterojunctions; III-V semiconductor; MBE; electron density; electron mobility; electron mobility enhancement; modulation-doped Ga0.47In0.53As/Al0.48 In0.52As heterojunctions; molecular beam epitaxy; room temperature; sheet carrier concentration; sheet carrier concentrations; spacer thickness;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19830112

Filename

4247385