• DocumentCode
    984090
  • Title

    0.66 ¿m room-temperature operation of InGaAlP DH laser diodes grown by MBE

  • Author

    Kawamura, Yuriko ; Asahi, H. ; Nagai, Hiroto ; Ikegami, Tomoaki

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    19
  • Issue
    5
  • fYear
    1983
  • Firstpage
    163
  • Lastpage
    165
  • Abstract
    Room-temperature pulsed operation of In0.49Ga0.31Al0.20P/In0.49Ga0.48Al0.03P/In0.49Ga0.31Al0.20P double heterostructure (DH) laser diodes has been achieved for the first time. The DH layers were grown by molecular beam epitaxy. The lasing wavelength was 0.66 ¿m and the threshold current density was 3.2¿3.6 × 104 A/cm2 at room temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; III-V semiconductors; InGaAlP DH laser diodes; MBE; double heterostructure; molecular beam epitaxy; pulsed operation; room-temperature operation; semiconductor growth; semiconductor lasers; threshold current density; wavelength 0.66 micron;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830114
  • Filename
    4247390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984090