• DocumentCode
    984192
  • Title

    Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits

  • Author

    Ker, Ming-Dou ; Hsu, Kuo-Chun

  • Author_Institution
    Nanoelectronics & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    5
  • Issue
    2
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    235
  • Lastpage
    249
  • Abstract
    An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; integrated circuit design; overvoltage protection; thyristors; CMOS integrated circuits; SCR based devices; latchup; on chip electrostatic discharge protection; voltage switching; Breakdown voltage; CMOS integrated circuits; CMOS technology; Dielectric breakdown; Electrostatic discharge; History; Protection; Stress; Switching circuits; Thyristors; ESD protection circuits; Electrostatic discharge (ESD); latchup; silicon controlled rectifier (SCR);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2005.846824
  • Filename
    1458740