Title :
ESD engineering of nitride-based LEDs
Author :
Su, Y.K. ; Chang, S.J. ; Wei, S.C. ; Chen, Shi-Ming ; Li, Wen-Liang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900°C-grown p-cap layer could only endure negative 1100 V electrostatic discharge (ESD) pulses while the LED with 1040°C-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040°C-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.
Keywords :
III-V semiconductors; crystal defects; electrostatic discharge; gallium compounds; light emitting diodes; semiconductor device manufacture; -3500 V; 1040 C; 900 C; ESD engineering; GaN; negative electrostatic discharge; nitride based LEDs; Electrostatic discharge; Epitaxial growth; Epitaxial layers; Gallium nitride; Light emitting diodes; Production; Quantum well devices; Scanning electron microscopy; Schottky diodes; Temperature; Electrostatic discharge (ESD); GaN; LED; V-defect; growth temperature;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2005.847197
