Title :
Ge-seeded crystallisation on SiO2 by using a slider system with RF heated strip heater
Author :
Ohmachi, Y. ; Nishioka, T. ; Shinoda, Y.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A slider system has been developed for crystallisation of semiconductor films on SiO2. The system consists of a graphite support, graphite strip heater and movable quartz substrate holder. A two heater procedure can be achieved with an RF heating coil. Single-crystal Ge films have been successfully grown over SiO2 on a Si substrate using a hetero lateral epitaxy by seeded solidification technique.
Keywords :
crystallisation; elemental semiconductors; germanium; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; solidification; zone melting; Ge-seeded crystallisation; RF heated strip heater; Si substrate; SiO2; graphite support; heterolateral epitaxy; quartz substrate holder; seeded solidification technique; semiconductor films; single crystal Ge films; slider system; zone melting;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830192
