DocumentCode
984876
Title
Ge-seeded crystallisation on SiO2 by using a slider system with RF heated strip heater
Author
Ohmachi, Y. ; Nishioka, T. ; Shinoda, Y.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
19
Issue
8
fYear
1983
Firstpage
274
Lastpage
275
Abstract
A slider system has been developed for crystallisation of semiconductor films on SiO2. The system consists of a graphite support, graphite strip heater and movable quartz substrate holder. A two heater procedure can be achieved with an RF heating coil. Single-crystal Ge films have been successfully grown over SiO2 on a Si substrate using a hetero lateral epitaxy by seeded solidification technique.
Keywords
crystallisation; elemental semiconductors; germanium; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; solidification; zone melting; Ge-seeded crystallisation; RF heated strip heater; Si substrate; SiO2; graphite support; heterolateral epitaxy; quartz substrate holder; seeded solidification technique; semiconductor films; single crystal Ge films; slider system; zone melting;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830192
Filename
4247580
Link To Document