A Differential X/Ku-Band Low Noise Amplifier in 0.13-μm CMOS Technology

Author

Yamagata, Masashi ; Hashemi, Hossein

Author_Institution

Southern California Univ., Los Angeles

Volume

17

Issue

12

fYear

2007

Firstpage

888

Lastpage

890

Abstract

A 7 to 15 GHz low noise amplifier (LNA) in 0.13-mum CMOS is reported. The two-stage fully differential LNA delivers a peak gain of 13 dB and a minimum noise figure of 3.1 dB while consuming 32 mW from a 1.5 V supply. The implemented LNA shows a quadratic improvement of 1-dB compression point with frequency as predicted analytically. The effect of the input matching inductor (on-chip spiral versus wirebond) and also the electrostatic discharge protection circuitry on the LNA performance have been verified experimentally.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; differential amplifiers; electrostatic discharge; low noise amplifiers; CMOS technology; electrostatic discharge protection circuitry; frequency 7 GHz to 15 GHz; gain 13 dB; low noise amplifier; matching inductor; noise figure 3.1 dB; power 32 mW; size 0.13 mum; two-stage fully differential LNA; voltage 1.5 V; CMOS technology; Differential amplifiers; Electrostatic discharge; Frequency; Gain; Impedance matching; Inductors; Low-noise amplifiers; Noise figure; Spirals; Complementary metal oxide semiconductor (CMOS); X/Ku-band; low noise amplifier (LNA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.910511

Filename

4385756