• DocumentCode
    985194
  • Title

    Stable tantalum silicide Schottky barrier on n-type gallium arsenide evaluated at elevated temperatures

  • Author

    Tseng, W.F. ; Christou, Alex

  • Author_Institution
    Naval Research Laboratory, Electronics Technology Division, Washington, USA
  • Volume
    19
  • Issue
    9
  • fYear
    1983
  • Firstpage
    330
  • Lastpage
    332
  • Abstract
    The high-temperature stability of sputtered tantalum silicide contacts on gallium arsenide has been evaluated. Diodes consisting of Ta silicide on epitaxial n (1.9 × 1017 cm¿3; 0.23 ¿m/n+ GaAs substrate were annealed at temperatures from 375°C to 800°C. Result show that the ideality factor, barrier height and reverse breakdown voltage remain stable at value of 1.1, 0.79 V and 9 V, respectively. MESFETs with Ta silicide gates exhibited similar drain current/voltage characteristics as conventional Cr/Au gate devices.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; Schottky-barrier diodes; gallium arsenide; tantalum compounds; Cr/Au gate devices; GaAs substrate; MESFETs; TaSi2 Schottky barriers; barrier height; drain current; elevated temperatures; high-temperature stability; ideality factor; reverse breakdown voltage; sputtering TaSi2 gates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830228
  • Filename
    4247665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985194