Title :
Stable tantalum silicide Schottky barrier on n-type gallium arsenide evaluated at elevated temperatures
Author :
Tseng, W.F. ; Christou, Alex
Author_Institution :
Naval Research Laboratory, Electronics Technology Division, Washington, USA
Abstract :
The high-temperature stability of sputtered tantalum silicide contacts on gallium arsenide has been evaluated. Diodes consisting of Ta silicide on epitaxial n (1.9 × 1017 cm¿3; 0.23 ¿m/n+ GaAs substrate were annealed at temperatures from 375°C to 800°C. Result show that the ideality factor, barrier height and reverse breakdown voltage remain stable at value of 1.1, 0.79 V and 9 V, respectively. MESFETs with Ta silicide gates exhibited similar drain current/voltage characteristics as conventional Cr/Au gate devices.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; Schottky-barrier diodes; gallium arsenide; tantalum compounds; Cr/Au gate devices; GaAs substrate; MESFETs; TaSi2 Schottky barriers; barrier height; drain current; elevated temperatures; high-temperature stability; ideality factor; reverse breakdown voltage; sputtering TaSi2 gates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830228
