Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactions

Author

Shun-Liang Hsu ; Lu-Min Liu ; Chung-Hsin Fang ; Shu-Lan Ying ; Chen, Tien-Li ; Lin, Mou-Shiung ; Chang, Chun-Yen

Author_Institution

Taiwan Semiconductor Manuf. Co., Hsin-Chu, Taiwan

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

49

Lastpage

53

Abstract

Severe field inversion was observed in circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the intermetal dielectrics and PEOX/PECVD nitride as the passivation layer. The authors performed detailed studies and concluded that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H⁺ released from PECVD nitride during the sintering. No field inversion was observed when PEOX/inorganic SOG/PEOX was used as the intermetal dielectrics. The effect of field inversion on the circuit yield is also discussed

Keywords

CMOS integrated circuits; integrated circuit technology; passivation; sintering; CMOS double-metal process; PEOX/PECVD nitride; PETEOS/inorganic SOG/PEOX; circuit yield; field inversion; intermetal dielectrics; passivation layer; sintering; Boron; CMOS process; Circuits; Dielectrics; Glass; Implants; Passivation; Planarization; Semiconductor device manufacture; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249423

Filename

249423