• DocumentCode
    985283
  • Title

    Effect of fluorine incorporation on the thermal stability of PtSi/Si structure

  • Author

    Bing-Yue Tsui ; Jiunn-Yan Tsai ; Wu, Tzong-Shien ; Chen, Mao-Chieh

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    40
  • Issue
    1
  • fYear
    1993
  • fDate
    1/1/1993 12:00:00 AM
  • Firstpage
    54
  • Lastpage
    63
  • Abstract
    It was observed that the fluorine incorporation from ion implantation improved the high-temperature stability of a PtSi/Si structure. The optimum implantation energy was determined to be the energy at which the maximum percentage of the as-implanted fluorine ion locates at the PtSi/Si interface region. SIMS analysis shows that the fluorine atom piles up at the PtSi/Si interface. XPS analysis indicates that the fluorine atoms at the PtSi/Si interface are bonded to the silicon atoms in a form of SiF2 or SiF3. A fluorine-buffer model is proposed to explain the effect of fluorine incorporation. It is postulated that the Si-F layer acts as a buffer layer to change the PtSi/Si interface energy and preserve the integrity of the silicide layer at high temperature. Fluorinated Schottky junctions were fabricated and the electrical characteristics show that the sustainable process temperature can be improved from 650°C for the unfluorinated junctions to higher than 800°C for the fluorinated junctions
  • Keywords
    Schottky effect; X-ray photoelectron spectra; fluorine; ion implantation; platinum compounds; secondary ion mass spectroscopy; silicon; 65 to 800 degC; PtSi-Si:F; SIMS analysis; Schottky junctions; XPS analysis; electrical characteristics; fluorine-buffer model; interface energy; ion implantation; optimum implantation energy; sustainable process temperature; thermal stability; Annealing; Atomic layer deposition; Conductivity; Degradation; Forward contracts; Silicides; Silicon; Temperature; Thermal stability; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.249424
  • Filename
    249424