Threshold voltage model for deep-submicrometer MOSFETs

Author

Liu, Zhi-Hong ; Hu, Chenming ; Huang, Jian-Hui ; Chan, Tung-Yi ; Jeng, Min-Chie ; Ko, Ping K. ; Cheng, Y.C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

86

Lastpage

95

Abstract

The threshold voltage, V_th, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep-submicrometer range has been investigated. Experimental data show that in the very-short-channel-length range, the previously reported exponential dependence on channel length and the linear dependence on drain voltage no longer hold true. A simple quasi-two-dimensional model is used, taking into account the effects of gate oxide thickness, source/drain junction depth, and channel doping, to describe the accelerated V_th on channel length due to their lower drain-substrate junction built-in potentials. LDD devices also show less V_th dependence on drain voltage because the LDD region reduces the effective drain voltage. Based on consideration of the short-channel effects, the minimum acceptable length is determined

Keywords

doping profiles; insulated gate field effect transistors; semiconductor device models; LDD devices; MOSFET model; channel doping; channel length; deep-submicrometer MOSFETs; drain voltage; drain-substrate junction; effective channel lengths; gate oxide thickness; lightly doped drain; quasi-two-dimensional model; short-channel effects; source/drain junction depth; threshold voltage; Acceleration; Doping; Helium; MOSFETs; Poisson equations; Predictive models; Quasi-doping; Semiconductor process modeling; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249429

Filename

249429