High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method

Author

Shimizu, Kazuhiro ; Sugiura, Osamu ; Matsumura, Masakiyo

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

112

Lastpage

117

Abstract

High-mobility poly-Si thin-film transistors (TFTs) were fabricated by a novel excimer laser crystallization method based on dual-beam irradiation. The new method can reduce the solidification velocity of the top Si layer by heating the bottom Si layer of the Si/SiO₂/Si/glass substrate structure by means of laser irradiation not only from the front side but also from the back side. The grain size of poly-Si film was enlarged up to 2 μm. The field-effect mobilities of the TFT exceeded 380 cm²/V-s for electrons and 100 cm²/V-s for holes

Keywords

carrier mobility; crystallisation; elemental semiconductors; laser beam effects; thin film transistors; Si-SiO₂-Si; back side; dual-beam irradiation; excimer laser crystallization method; field-effect mobilities; front side; grain size; polysilicon TFTs; solidification velocity; thin-film transistors; Crystallization; Glass; Grain size; Heating; Semiconductor films; Solid lasers; Substrates; Temperature; Thermal conductivity; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249432

Filename

249432