Hot-carrier degradation of submicrometer p-MOSFETs with thermal/LPCVD composite oxide

Author

Lee, Young-Hyun ; Yau, L.D. ; Hansen, Erik ; Chau, R. ; Sabi, B. ; Hossaini, Shahab ; Asakawa, Butch

Author_Institution

Intel Corp., Hillsboro, OR, USA

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

163

Lastpage

168

Abstract

It is shown that while gate oxides containing thermal/LPCVD composite oxide have lower defect densities than gates using only thermal oxides, they are more susceptible to hot-carrier degradation. The hot-carrier-induced degradation of composite oxides is worse in p-channel MOSFETs than in n-channel MOSFETs. This sensitivity of p-channel MOSFETs is caused by higher electron trapping levels in LPCVD oxides. For 150-Å gate technology, the hot-carrier-degradation resistance of thermal/LPCVD composite gate oxides with a 70-Å or thicker thermal oxide layer approaches that of high-quality pure thermal oxide

Keywords

electron traps; hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; 150 Å; 70 Å; Si-SiO₂; electron trapping levels; gate oxides; hot-carrier-induced degradation; p-channel MOSFETs; submicrometer p-MOSFETs; submicron PMOS devices; thermal/LPCVD composite oxide; CMOS technology; Current measurement; Electron traps; Hot carriers; MOSFET circuits; Permittivity; Thermal degradation; Thermal resistance; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249440

Filename

249440