Non-quasi-static transient and small-signal two-dimensional modeling of GaAs MESFET´s with emphasis on distributed effects

Author

Akhtar, Salman ; Tiwari, Sandip

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2154

Lastpage

2163

Abstract

The operation of micron and submicron GaAs MESFETs under high-speed transient and high-frequency small-signal conditions is analyzed using a two-dimensional model. The effects of displacement currents, dipole due to negative differential mobility or current continuity, and two-dimensional transport are emphasized. The origin of delay effects, such as the phase delay incorporated in small-signal models, is explored in order to relate it to the behavior under switching conditions. Broadband expressions for the extraction of a complete small-signal model are presented. Using the expressions derived, the variation of model elements with frequency and the effect of this on the unilateral gain of the device are studied

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier mobility; delays; equivalent circuits; gallium arsenide; negative resistance; semiconductor device models; solid-state microwave devices; transient response; GaAs; broadband expressions; channel electron density; current continuity; displacement currents; high-frequency small-signal conditions; negative differential mobility; nonquasistatic transient model; phase delay; small-signal two-dimensional model; submicron GaAs MESFETs; switching conditions; two-dimensional model; two-dimensional transport; unilateral gain; Capacitance; Delay effects; Equivalent circuits; FETs; Frequency; Gallium arsenide; Geometry; MESFETs; Solid modeling; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249459

Filename

249459