• DocumentCode
    985571
  • Title

    Temporal and spectral characteristics of rapidly gain-switched GaAs/GaAlAs buried-heterostructure lasers

  • Author

    Veith, G. ; Kuhl ; G¿¿bel, E.O.

  • Author_Institution
    Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
  • Volume
    19
  • Issue
    10
  • fYear
    1983
  • Firstpage
    385
  • Lastpage
    387
  • Abstract
    The temporal and spectral output of GaAs/GaAlAs buried-heterostructure lasers under excitation with 60 ps electrical pulses is investigated for different DC bias conditions. Optical pulses comparable in width to the electrical pulses can be obtained only if the DC bias is below or close to threshold, where multimode emission is observed. For DC bias well above threshold the laser remains single-mode; however, the optical pulses are considerably broadened.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; p-n heterojunctions; semiconductor junction lasers; DC bias conditions; GaAs/GaAlAs buried-heterostructure lasers; III-V semiconductors; bias threshold; electric pulse excitation; multimode emission; optical pulse broadening; rapid gain switching; semiconductor laser; single-mode; spectral characteristics; temporal characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830267
  • Filename
    4247719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985571