P-MOSFET´s with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall

Author

Saito, Masanobu ; Yoshitomi, Takashi ; Hara, Hisashi ; Ono, Mizuki ; Akasaka, Yasushi ; Nii, Hideaki ; Matsuda, Satoshi ; Momose, Hisayo Sasaki ; Katsumata, Yasuhiro ; Ushiku, Yukihiro ; Iwai, Hiroshi

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2264

Lastpage

2272

Abstract

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved

Keywords

CVD coatings; borosilicate glasses; diffusion in solids; hot carriers; insulated gate field effect transistors; reliability; silicon; 0.1 micron; B2O3-SiO2; BSG; BSG gate-sidewall; LPCVD polysilicon gate; Si:B; depletion formation; electrical characteristics; high-concentration drain profile; highly B-doped polysilicon; highly doped borosilicate glass; highly doped ultrashallow junctions; hot-carrier reliability; p-MOSFET structure; p⁺ drain junctions; p⁺ source junctions; short channel effects; solid-phase-diffused drain structure; transconductance degradation; ultra-shallow drain structure; ultrasmall p-MOSFETs; Boron; Degradation; Electric resistance; Electric variables; Insulation; Ion implantation; MOSFET circuits; Temperature; Testing; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249474

Filename

249474