Title :
The effects of H2-O2-plasma treatment on the characteristics of polysilicon thin-film transistors
Author :
Chern, Horng Nan ; Lee, Chung Len ; Lei, Tan Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
12/1/1993 12:00:00 AM
Abstract :
The effects of H2-plasma followed by O2-plasma treatment on n-channel polysilicon thin-film transistors (TFTs) were investigated. It was found that the H2-O2-plasma treatment is more effective in passivating the trap states of polysilicon films than the H2-plasma or O2-plasma treatment only. Hence, it is more effective in improving the device performance with regard to subthreshold swing, carrier mobility, and the current ON/OFF ratio. It is also found that thermal annealing of plasma-treated devices increases the deep states but has no effect on the tail states of the devices
Keywords :
annealing; carrier mobility; deep levels; defect electron energy states; elemental semiconductors; interface electron states; passivation; semiconductor device testing; silicon; surface treatment; thin film transistors; H2; H2-O2; H2-O2-plasma treatment; I-V characteristics; O2; Si; Si-SiO2; carrier mobility; current ON/OFF ratio; dangling bonds; deep states; n-channel TFTs; polysilicon thin-film transistors; subthreshold swing; tail states; thermal annealing; thermal stability; trap state passivation; Annealing; Grain boundaries; Grain size; Hydrogen; Plasma density; Plasma devices; Plasma stability; Silicon; Tail; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
