A time-dependent two-dimensional analysis of the turn-off process in a gate turn-off thyristor (GTO)

Author

Vobecky, Jan ; Bleichner, Henry ; Rosling, Mats ; Nordlander, Edvard

Author_Institution

Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2352

Lastpage

2358

Abstract

A time-resolved free-carrier absorption technique is used to describe transient gate turn-off thyristor (GTO) phenomena two-dimensionally. The measurements are spatially resolved in the anode-to-cathode direction, as well as in the direction determined by the cathode length. Effects associated with charge removal during the GTO turn-off cycle with respect to external circuit conditions are discussed. The behavior of resistively and inductively loaded GTOs is explained on the basis of experimental results. Modeled results published by others are used for comparison

Keywords

semiconductor device models; thyristors; transient response; GTO modelling; GTO turnoff cycle; charge removal; external circuit conditions; gate turnoff thyristor; inductively loaded GTOs; resistively loaded GTOs; time-dependent 2D analysis; time-resolved free-carrier absorption technique; transient phenomena; turn-off process; two-dimensional analysis; Absorption; Cathodes; Circuits; Equations; Helium; Length measurement; Pulp manufacturing; Radiative recombination; Thyristors; Virtual manufacturing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249486

Filename

249486